The Jeol field emission scanning electron microscope is a versatile high resolution scanning electron microscope. This Machine combines two proven technologies – an electron column with semi-in-lens objective lens which can provide high resolution imaging by low accelerating voltage and an in-lens Schottky FEG which can provide stable large probe current – to deliver ultrahigh resolution with wide range of probe currents for all applications (A few pA to more than 200 nA). The in-lens Schottky FEG is a combination of a Schottky FEG and the first condenser lens and is designed to collect the electrons from the emitter efficiently. The Gentle Beam (GB) mode applies a negative voltage to a specimen and decelerates incident electrons just before they irradiate the specimen, thus the resolution is improved at an extremely low accelerating voltage. Therefore, this instrument is possible to observe a topmost surface by a few hundred eV which were difficult to observe conventionally and nonconductive samples such as ceramics and semiconductor etc.

The High Power Optics produces fine electron probe for both observation and analysis. The aperture angle control lens maintains a small probe diameter even at a larger probe current. Using both techniques, the machine is suitable for a wide variety of analysis with EDS.

Apart from giving the high resolution surface morphological images, this machine also has the analytical capabilities such as detecting the presence of elements down to boron (B) on any solid conducting materials through the energy dispersive X-ray spectrometry (EDX) providing crystalline information from the few nano meter depth of the material surface via electron back scattered detection (BSD) system attached with microscope.